Oxford Instruments Receives Orders for GaN ALE and ALD Systems from Several Key Japanese Power Electronics and RF Foundries

Oxford Instruments Plasma Technology reveals substantial order positionings for plasma atomic layer deposition (ALD) and atomic layer etch (ALE) for GaN HEMT gadget manufacturing from several market-leading Japanese foundries. The systems will certainly sustain high-growth GaN power electronics and superhigh frequency markets, with customer fast-charging and datacentre applications at the leading edge for power electronics, and 5G/6G interaction applications for the superhigh frequency market.

Oxford Instruments’ ALD modern technology provides high throughput, reduced damages plasma handling with improved movie and user interface high quality, and is located internationally at market-leading GaN HEMT gadget producers. Oxford Instruments’ ALE option for p-GaN HEMTs is production-qualified and incorporates reduced damages engraving with unrivaled precision with Etchpoint ^®, a distinct endpoint …